近日，中國科學院微電子研究所感知中心低功耗智能技術與系統團隊在低功耗集成電路設計領域取得新進展，設計出兼容近/亞閾值工作區的基礎電路單元，可廣泛應用于低功耗智能計算芯片。

功(gong)(gong)耗已成為制約集成電(dian)(dian)(dian)路(lu)發展的瓶(ping)頸。近(jin)/亞閾(yu)值(zhi)(zhi)技(ji)術通過將(jiang)芯(xin)片工作電(dian)(dian)(dian)壓(ya)降(jiang)(jiang)低(di)(di)到晶體管的閾(yu)值(zhi)(zhi)電(dian)(dian)(dian)壓(ya)附近(jin)或閾(yu)值(zhi)(zhi)電(dian)(dian)(dian)壓(ya)以(yi)下，可大幅降(jiang)(jiang)低(di)(di)數字系統的功(gong)(gong)耗。近(jin)/亞閾(yu)值(zhi)(zhi)基(ji)礎(chu)數字電(dian)(dian)(dian)路(lu)單元是低(di)(di)功(gong)(gong)耗智(zhi)能計算(suan)芯(xin)片的基(ji)石，也是本研究重(zhong)點解(jie)決的難題。

研究首次提(ti)(ti)出了(le)領先的(de)(de)(de)(de)(de)零(ling)冗(rong)余(yu)(yu)動(dong)態功(gong)(gong)耗(hao)(hao)觸(chu)發(fa)(fa)器(qi)(qi)、pW級寬范圍電(dian)(dian)(dian)(dian)(dian)(dian)(dian)平(ping)轉(zhuan)(zhuan)(zhuan)換(huan)(huan)器(qi)(qi)及nW級高精度(du)上(shang)(shang)(shang)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)復(fu)位(wei)(wei)(wei)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)路(lu)(lu)，可廣泛應用于(yu)(yu)低(di)(di)(di)(di)(di)功(gong)(gong)耗(hao)(hao)的(de)(de)(de)(de)(de)智能計(ji)算芯片(pian)。針(zhen)對傳(chuan)統(tong)(tong)主從(cong)觸(chu)發(fa)(fa)器(qi)(qi)由于(yu)(yu)冗(rong)余(yu)(yu)操作造成的(de)(de)(de)(de)(de)功(gong)(gong)耗(hao)(hao)浪費問題(ti)，科(ke)研人(ren)員提(ti)(ti)出了(le)一(yi)種兼容近/亞閾(yu)值(zhi)設(she)計(ji)的(de)(de)(de)(de)(de)低(di)(di)(di)(di)(di)功(gong)(gong)耗(hao)(hao)保(bao)(bao)持TSPC觸(chu)發(fa)(fa)器(qi)(qi)。該(gai)(gai)(gai)觸(chu)發(fa)(fa)器(qi)(qi)采用輸入感知預充策略，輔以(yi)浮(fu)動(dong)節點(dian)分析和(he)晶(jing)體(ti)(ti)管級優(you)化(hua)(hua)，有(you)效降(jiang)(jiang)低(di)(di)(di)(di)(di)了(le)觸(chu)發(fa)(fa)器(qi)(qi)的(de)(de)(de)(de)(de)功(gong)(gong)耗(hao)(hao)。流(liu)片(pian)結果表明，該(gai)(gai)(gai)觸(chu)發(fa)(fa)器(qi)(qi)功(gong)(gong)耗(hao)(hao)相比于(yu)(yu)傳(chuan)統(tong)(tong)主從(cong)觸(chu)發(fa)(fa)器(qi)(qi)降(jiang)(jiang)低(di)(di)(di)(di)(di)了(le)73%。針(zhen)對傳(chuan)統(tong)(tong)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)平(ping)轉(zhuan)(zhuan)(zhuan)換(huan)(huan)器(qi)(qi)轉(zhuan)(zhuan)(zhuan)換(huan)(huan)范圍窄、漏電(dian)(dian)(dian)(dian)(dian)(dian)(dian)大、不(bu)(bu)適用于(yu)(yu)近/亞閾(yu)值(zhi)設(she)計(ji)的(de)(de)(de)(de)(de)問題(ti)，研究提(ti)(ti)出了(le)一(yi)種低(di)(di)(di)(di)(di)延遲(chi)低(di)(di)(di)(di)(di)漏電(dian)(dian)(dian)(dian)(dian)(dian)(dian)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)平(ping)轉(zhuan)(zhuan)(zhuan)換(huan)(huan)器(qi)(qi)。該(gai)(gai)(gai)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)平(ping)轉(zhuan)(zhuan)(zhuan)換(huan)(huan)器(qi)(qi)基于(yu)(yu)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)流(liu)鏡結構(gou)，采用混(hun)合閾(yu)值(zhi)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)流(liu)鏡技術有(you)效解決了(le)切(qie)斷直流(liu)通路(lu)(lu)后的(de)(de)(de)(de)(de)節點(dian)壓降(jiang)(jiang)問題(ti)，同時采用超截(jie)斷技術進一(yi)步(bu)優(you)化(hua)(hua)了(le)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)平(ping)轉(zhuan)(zhuan)(zhuan)換(huan)(huan)器(qi)(qi)的(de)(de)(de)(de)(de)漏電(dian)(dian)(dian)(dian)(dian)(dian)(dian)。流(liu)片(pian)結果表明，該(gai)(gai)(gai)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)平(ping)轉(zhuan)(zhuan)(zhuan)換(huan)(huan)器(qi)(qi)支持0.12V-1.2V的(de)(de)(de)(de)(de)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓轉(zhuan)(zhuan)(zhuan)換(huan)(huan)，漏電(dian)(dian)(dian)(dian)(dian)(dian)(dian)低(di)(di)(di)(di)(di)至73.95pW。在數(shu)字系(xi)(xi)(xi)統(tong)(tong)中，系(xi)(xi)(xi)統(tong)(tong)上(shang)(shang)(shang)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)和(he)掉電(dian)(dian)(dian)(dian)(dian)(dian)(dian)時還需要(yao)一(yi)個(ge)復(fu)位(wei)(wei)(wei)信號將系(xi)(xi)(xi)統(tong)(tong)中的(de)(de)(de)(de)(de)存儲單元(yuan)設(she)置為一(yi)個(ge)確定的(de)(de)(de)(de)(de)狀(zhuang)態。為了(le)保(bao)(bao)證近/亞閾(yu)值(zhi)下數(shu)字系(xi)(xi)(xi)統(tong)(tong)的(de)(de)(de)(de)(de)穩定工作，需要(yao)觸(chu)發(fa)(fa)閾(yu)值(zhi)低(di)(di)(di)(di)(di)、閾(yu)值(zhi)偏(pian)差小(xiao)、靜態電(dian)(dian)(dian)(dian)(dian)(dian)(dian)流(liu)小(xiao)的(de)(de)(de)(de)(de)上(shang)(shang)(shang)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)復(fu)位(wei)(wei)(wei)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)路(lu)(lu)。針(zhen)對以(yi)上(shang)(shang)(shang)問題(ti)，該(gai)(gai)(gai)研究提(ti)(ti)出了(le)一(yi)種低(di)(di)(di)(di)(di)功(gong)(gong)耗(hao)(hao)10晶(jing)體(ti)(ti)管上(shang)(shang)(shang)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)復(fu)位(wei)(wei)(wei)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)路(lu)(lu)。該(gai)(gai)(gai)上(shang)(shang)(shang)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)復(fu)位(wei)(wei)(wei)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)路(lu)(lu)基于(yu)(yu)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)流(liu)參考和(he)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)流(liu)比較(jiao)器(qi)(qi)結構(gou)，僅用10個(ge)晶(jing)體(ti)(ti)管即實(shi)現了(le)高精度(du)低(di)(di)(di)(di)(di)功(gong)(gong)耗(hao)(hao)的(de)(de)(de)(de)(de)上(shang)(shang)(shang)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)復(fu)位(wei)(wei)(wei)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)路(lu)(lu)。仿(fang)真結果表明，該(gai)(gai)(gai)上(shang)(shang)(shang)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)復(fu)位(wei)(wei)(wei)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)路(lu)(lu)在不(bu)(bu)同工藝角(jiao)和(he)溫度(du)條件下，觸(chu)發(fa)(fa)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓偏(pian)差僅為34mV，在0.5V的(de)(de)(de)(de)(de)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)源電(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓下靜態功(gong)(gong)耗(hao)(hao)低(di)(di)(di)(di)(di)至36nW。

相(xiang)關研究成(cheng)(cheng)果分別(bie)發(fa)表在《IEEE超大規(gui)模集成(cheng)(cheng)電路與(yu)系(xi)統匯刊》、《IEEE電路與(yu)系(xi)統匯刊Ⅱ》、《2021 IEEE國際(ji)電路與(yu)系(xi)統研討會》上。研究工作(zuo)得(de)到中科院、國家重點(dian)研發(fa)計劃、微電子所所長基金(jin)等的(de)資助(zhu)。